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| LL101A-LL101C Vishay Semiconductors Small Signal Schottky Barrier Diodes Features D Integrated protection ring against static discharge D Low capacitance D Low leakage current D Low forward voltage drop Applications HF-Detector Protection circuit Diode for low currents with a low supply voltage Small battery charger Power supplies DC / DC converter for notebooks 94 9371 Order Instruction Type LL101A LL101B LL101C Type Differentiation VR=60 V, VF@IF1mA max. 0.41 V VR=50 V, VF@IF1mA max. 0.4 V VR=40 V, VF@IF1mA max. 0.39 V Ordering Code LL101A-GS08 LL101B-GS08 LL101C-GS08 Remarks Tape and Reel Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Peak forward surge current Repetitive peak forward current Forward current Junction temperature Storage temperature range tp=10ms Test Conditions Type LL101A LL101B LL101C Symbol VR VR VR IFSM IFRM IF Tj Tstg Value 60 50 40 2 150 30 125 -65...+150 Unit V V V A mA mA C C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50 mmx50 mmx1.6 mm Symbol RthJA Value 320 Unit K/W Document Number 85626 Rev. 2, 13-Mar-00 www.vishay.com 1 (4) LL101A-LL101C Vishay Semiconductors Electrical Characteristics Tj = 25_C Parameter Reverse Breakdown Voltage g Test Conditions IR=10mA m VR= 50 V VR= 40 V VR= 30 V IF=1mA Forward voltage drop IF=15mA Type LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C LL101A LL101B LL101C Symbol V(BR)R V(BR)R V(BR)R IR IR IR VF VF VF VF VF VF CD CD CD Min 60 50 40 Typ Max Unit V V V nA nA nA V V V V V V pF pF pF Leakage current g Diode capacitance VR= 0 V, f= 1MHz 200 200 200 0.41 0.4 0.39 1 0.95 0.9 2.0 2.1 2.2 Characteristics (Tj = 25_C unless otherwise specified) 100.00 Tj=150C 2.0 1.8 C D- Diode Capacitance ( pF ) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage ( V ) 16205 Tj=25C Reverse Current ( A) Tj=125C 10.00 Tj=100C 1.00 Tj=75C Tj=50C R- 0.10 Tj=25C I 0.01 16204 0 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage ( V ) Figure 1. Reverse Current vs. Reverse Voltage Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 (4) Document Number 85626 Rev. 2, 13-Mar-00 LL101A-LL101C Vishay Semiconductors 10.00 Forward Current ( mA ) I - F 1.00 0.10 0.01 0 16206 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF - Forward Voltage ( V ) Figure 3. Forward Current vs. Forward Voltage Dimensions in mm 96 12070 Document Number 85626 Rev. 2, 13-Mar-00 www.vishay.com 3 (4) LL101A-LL101C Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.com 4 (4) Document Number 85626 Rev. 2, 13-Mar-00 |
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